(China (Mainland))
Product Summary
The BT258S-800R is a Passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. The BT258S-800R is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Parametrics
BT258S-800R absolute maximum ratings: (1)Repetitive peak off-state voltages:800V; (2)Average on-state current:5A; (3)RMS on-state current: 8A; (4)Non-repetitive peak on-state current:75A; (5)Peak reverse gate voltage:5V; (6)Peak gate power:5W; (7)Average gate power:0.5W; (8)Storage temperature:-40 to 150°C; (9)Operating junction temperature:125°C.
Features
BT258S-800R features: (1)Gate trigger current: 50 to 200uA; (2)Latching current: 0.4 to 10mA; (3)Holding current: 0.3 to 6mA; (4)On-state voltage: 1.3 to 1.6V; (5)Gate trigger voltage: 0.4 to 1.5V.
Diagrams
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 BT258S-800R |
Other |
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Data Sheet |
Negotiable |
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BT258S-800R /T3 |
NXP Semiconductors |
SCRs TAPE13 THY-GP |
Data Sheet |
Negotiable |
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BT258S-800R,118 |
NXP Semiconductors |
SCRs TAPE13 THY-GP |
Data Sheet |
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