(China (Mainland))
Product Summary
The HEXFET technology is the key to the IRFF9130 power MOSFET transistor. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with high transconductance. The IRFF9130 transistor also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. It is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Parametrics
Absolute maximum ratings: (1)ID @ VGS = -10V, TC = 25℃, Continuous Drain Current: -6.5A; (2)ID @ VGS = -10V, TC = 100℃ Continuous Drain Current -4.1A; (3)IDM, Pulsed Drain Current: -25A; (4)PD @ TC = 25℃ Max, Power Dissipation: 25W; (5)Linear Derating Factor: 0.20W/℃; (6)VGS, Gate-to-Source Voltage: ±20V; (7)EAS, Single Pulse Avalanche Energy: 92mJ; (8)dv/dt, Peak Diode Recovery dv/dt: -5.5V/ns; (9)TJ, TSTG, Operating Junction Storage Temperature Range: -55 to 150℃; (10)Lead Temperature: 300℃; (11)Weight: 0.98(typical)g.
Features
Features: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.
Diagrams
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 IRFF9130 |
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IRFF024 |
Other |
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IRFF110 |
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IRFF120 |
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Negotiable |
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IRFF130 |
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Negotiable |
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IRFF210 |
Other |
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Negotiable |
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IRFF220 |
Other |
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Negotiable |
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