(China (Mainland))
Product Summary
The K6R4008V1D-KI10 is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4008V1D-KI10 uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control(UB, LB). The K6R4008V1D-KI10 is fabricated using SAMSUNG’s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4008V1D-KI10 is packaged in a 400mil 44-pin plastic SOJ or TSOP(II) forward or 48 T BGA.
Parametrics
K6R4008V1D-KI10 absolute maximum ratings: (1)Voltage on Any Pin Relative to VSS VIN, VOUT: -0.5 to VCC+0.5 V; (2)Voltage on VCC Supply Relative to VSS VCC: -0.5 to 7.0 V; (3)Power Dissipation PD: 1.0 W; (4)Storage Temperature TSTG: -65 to 150℃; (5)Operating Temperature, TA: 0 to 70℃.
Features
K6R4008V1D-KI10 features: (1)Fast Access Time 10ns(Max.); (2)Low Power Dissipation; (3)Single 5.0V±10% Power Supply; (4)TTL Compatible Inputs and Outputs; (5)Fully Static Operation; (6)Three State Outputs; (7)Center Power/Ground Pin Configuration; (8)Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16; (9)Operating in Commercial and Industrial Temperature range.
Diagrams
