Product Summary

The CY7C1062AV33-10BGI is a high-performance CMOS Static RAM organized as 524,288 words by 32 bits. The input/output pins (I/O0 through I/O31) are placed in a high-impedance state when the CY7C1062AV33-10BGI is deselected (CE1, CE2or CE3 HIGH), the outputs are disabled (OE HIGH), the byte selects are disabled (BA-D HIGH), or during a write operation (CE1, CE2, and CE3 LOW, and WE LOW). The CY7C1062AV33-10BGI is available in a 119-ball pitch ball grid array (PBGA) package.

Parametrics

CY7C1062AV33-10BGI absolute maximum ratings: (1)Storage Temperature:–65℃ to +150℃; (2)Ambient Temperature with Power Applied:–55℃ to +125℃; (3)Supply Voltage on VCC to Relative GND:–0.5V to +4.6V; (4)DC Voltage Applied to Outputs in High-Z State:–0.5V to VCC+0.5V; (5)DC Input Voltage:–0.5V to VCC + 0.5V; (6)Current into Outputs (LOW):20 mA.

Features

CY7C1062AV33-10BGI features: (1)High speed:tAA = 8 ns ; (2)Low active power:1080 mW (max.); (3)Operating voltages of 3.3 ± 0.3V; (4)2.0V data retention ; (5)Automatic power-down when deselected; (6)TTL-compatible inputs and outputs; (7)Easy memory expansion with CE1, CE2, and CE3 features; (8)Available in non Pb-free 119-ball PBGA package.

Diagrams

CY7C1062AV33-10BGI block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
CY7C1062AV33-10BGI
CY7C1062AV33-10BGI

Cypress Semiconductor

SRAM 512K x 32 Fast Async IND

Data Sheet

Negotiable 
CY7C1062AV33-10BGIT
CY7C1062AV33-10BGIT

Cypress Semiconductor

SRAM 512K x 32 Fast Async IND

Data Sheet

Negotiable