Product Summary

The M28W160CB70N6E is a 16 Mbit (1 Mbit x 16) non-vol-atile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis.

Parametrics

M28W160CB70N6E absolute maximum ratings: (1)Ambient Operating Temperature:-40℃ to 85℃; (2)Temperature Under Bias:-40℃ to 125℃; (3)Storage Temperature:-55℃ to 155℃; (4)Input or Output Voltage:-0.6V to VDDQ+0.6V; (5)Supply Voltage:-0.6V to 4.1V; (6)Program Voltage:-0.6V to 13V.

Features

M28W160CB70N6E features: (1)access time: 70, 85, 90,100ns; (2)programming time:10μs typical, Double Word Programming Option ; (3)common flash interface:64 bit Security Code; (4)memory blocks:Parameter Blocks (Top or Bottom location),Main Blocks; (5)block locking:All blocks locked at Power Up,Any combination of blocks can be locked, WP for Block Lock-Down ; (6)automatic stand-by mode; (7)program and erase suspend; (8)100,000 program/erase cycles per block ; (9)ecopack packages available.

Diagrams

M28W160CB70N6E block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
M28W160CB70N6E
M28W160CB70N6E

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Data Sheet

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(USD)
Quantity
M28W160B
M28W160B

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